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Spin Dynamics in Gan- And Ingaas-Based Semiconductor Structures

Name: Spin Dynamics in Gan- And Ingaas-Based Semiconductor Structures
Brand: Scholars' Press
SKU: 07174562
Price: 334.85 RON
Availability: InStock
Author: Cong Tu Nguyen
ISBN: 9783639510874

Cong Tu Nguyen

Thierry Amand

Andrea Balocchi

Limba

engleză

Carte Carte broșată

Codul Libristo: 07174562

Editura Scholars' Press, iulie 2014

This work is a contribution to the investigation of the spin properties of III-V semiconductors with... Descrierea completă

Codul Libristo: 07174562

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This work is a contribution to the investigation of the spin properties of III-V semiconductors with possible applications to the emerging semiconductor spintronics field. Two approaches have been explored in this work to achieve a long and robust spin polarization: i) Spatial confinement of the carriers in 0D nanostructured systems (quantum dots). ii) Defect engineering of paramagnetic centres in a bulk systems. Concerning the first approach, we investigated the polarization properties of excitons in nanowire-embedded GaN/AlN quantum dots. We evidence a sizeable and temperature insensitive linear polarization degree of the photoluminescence (~15 %) under quasi-resonant excitation with no temporal decay during the exciton lifetime. A detailed theoretical model has also been developed to account for the observed results. Regarding the second approach, we demonstrated a proof-of-concept of conduction band spin-filtering device based on the implantation of paramagnetic centres in InGaAs epilayers. This approach relies on the creation of Ga interstitial defects in dilute nitride GaAsN compounds and it overcomes the limitations inherent to the introduction of N in the compounds.