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High-Speed Vertical-Cavity Surface-Emitting Lasers
Reduced Electrical and Thermal Constraints on Modulation Bandwidth
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In this study high-speed oxide-confined VCSELs were §fabricated and characterized.§Complete fabrication processes for top-emitting self-§aligned and non-self-aligned 850nm§and 980nm high-speed VCSELs were developed. A §complete fabrication process for§bottom-emitting, non-self-aligned, flip-chip bonded §980nm high-speed VCSELs was§developed. Some of the critical fabrication steps §that affect the VCSEL s speed were§examined. The effect of a heat-sinking layer on the §performance of high-speed VCSELs§was demonstrated for 850nm and 980nm devices. To §further improve the understanding of current high-§speed VCSEL performance restrictions, the effect of §external heating on the VCSEL s resonance frequency §and damping factor was examined for top-emitting, §self-aligned 980nm VCSELs. Furthermore, as the §contacts of the self-aligned VCSELs go through §annealing, etching, and oxidation, experiments on §metal systems used were performed. To better model §the high-speed devices, the dielectric properties of §four different spin-on dielectrics were §investigated.
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